IS64WV1288DBLL
FEATURES
HIGH SPEED: (IS63/64WV1288DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 μW (typical)
CMOS standby
LOW POWER: (IS63/64WV1288DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 μW (typical)
CMOS standby
• Single power supply
— Vdd 1.65V to 2.2V (IS63WV1288DAxx)
— Vdd 2.4V to 3.6V (IS63/64WV1288DBxx)
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Lead-free available
DESCRIPTION
The ISSI IS63/64WV1288Dxxx is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM.
The IS63/64WV1288DBLL is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down to 25 μW (typical) with CMOS input levels.
The IS63/64WV1288DBLL operates from a single Vdd
power supply. The IS63/64WV1288Dxxx is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball
miniBGA (6mm x 8mm), 32-pin SOJ (400-mil) and 32-
pin SOJ (300-mil) packages.
