IS63WV1024BLL
FEATURES
• High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V – 3.6V
• High-performance, low-power CMOS process
• CMOS Low Power Operation
50 mW (typical) operating current
25 μW (typical) standby current
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Packages available:
– 32-pin TSOP (Type II)
– 32-pin sTSOP (Type I)
– 48-Ball miniBGA (6mm x 8mm)
– 32-pin 300-mil SOJ
• Lead-free available
DESCRIPTION
The ISSI IS63/64WV1024BLL is a very high-speed, low
power, 131,072-word by 8-bit CMOS static RAM. The
IS63/64WV1024BLL is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 25 μW (typical) with CMOS input levels.
The IS63/64WV1024BLL operates from a single VDD
power supply. The IS63/64WV1024BLL is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball
miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil)
packages.
