IS62WV51216BLL
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 μW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V VDD (62WV51216ALL)
– 2.5V--3.6V VDD (62WV51216BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
DESCRIPTION
The ISSI IS62WV51216ALL/ IS62WV51216BLL are highspeed,
8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both LB
and UB are HIGH, the device assumes a standby mode at
which the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A data
byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62WV51216ALL and IS62WV51216BLL are packaged
in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm)
and 44-Pin TSOP (TYPE II).
