IS62WV102416ALL
FEATURES
• High-speed access times:
25, 35 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CS1 and OE
options
• CS1 power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS62WV102416ALL)
speed = 35ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS62/65WV102416BLL)
speed = 25ns for VDD 2.4V to 3.6V
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
DESCRIPTION
The ISSI IS62WV102416ALL/BLL and IS65WV102416BLL
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields highperformance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is LOW
(deselected) or when CS1 is LOW, CS2 is HIGH and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
