IS61WV51232BLS
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS61WV51232Axx)
speed = 20ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS61/64WV51232Bxx)
speed = 10ns for VDD 2.4V to 3.6V
speed = 8ns for VDD 3.3V + 5%
• Packages available:
– 90-ball miniBGA (8mm x 13mm)
• Industrial and Automotive Temperature Support
• Lead-free available
DESCRIPTION
The ISSI IS61WV51232Axx/Bxx and IS64WV51232Bxx
are high-speed, 16M-bit static RAMs organized as 512K
words by 32 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory.
The device is packaged in the JEDEC standard 90-ball BGA
(8mm x 13mm).
