IS61WV51216EDALL
FEATURES
• High-speed access times: 8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single Power Supply
– Vdd = 1.65V to 2.2V (IS61WV51216EDALL)
– Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
• Packages available:
– 48-ball miniBGA (6mm x 8mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
DESCRIPTION
The ISSI IS61WV51216EDALL and
IS61/64WV51216EDBLL are high-speed, 8M-bit static
RAMs organized as 512K words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and
low power consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active
LOW Write Enable (WE) controls both writing and reading
of the memory. A data byte allows Upper Byte (UB)
and Lower Byte (LB) access.
The device is packaged in the JEDEC standard 44-pin
TSOP Type II and 48-pin Mini BGA (6mm x 8mm).
