IS61WV25632ALL
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
Vdd 1.65V to 2.2V (IS61WV25632Axx)
speed = 20ns for Vdd 1.65V to 2.2V
Vdd 2.4V to 3.6V (IS61/64WV25632Bxx)
speed = 10ns for Vdd 2.4V to 3.6V
speed = 8ns for Vdd 3.3V + 5%
• Packages available:
– 90-ball miniBGA (8mm x 13mm)
• Industrial and Automotive Temperature Support
• Lead-free available
DESCRIPTION
The ISSI IS61WV25632Axx/Bxx and IS64WV25632Bxx
are high-speed, 8M-bit static RAMs organized as 256K
words by 32 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of
the memory.
The device is packaged in the JEDEC standard 90-ball
BGA (8mm x 13mm).
