IS61WV10248ALL
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
– VDD 1.65V to 2.2V (IS61WV10248ALL)
speed = 20ns for Vcc = 1.65V to 2.2V
– VDD 2.4V to 3.6V (IS61/64WV10248BLL)
speed = 10ns for Vcc = 2.4V to 3.6V
speed = 8ns for Vcc = 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
DESCRIPTION
The ISSI IS61WV10248ALL/BLL and IS64WV10248BLL
are very high-speed, low power, 1M-word by 8-bit CMOS
static RAM. The IS61WV10248ALL/BLL and
IS64WV10248BLL are fabricated using ISSI's highperformance
CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV10248ALL/BLL and IS64WV10248BLL
operate from a single power supply and all inputs are
TTL-compatible.
The IS61WV10248ALL/BLL and IS64WV10248BLL are
available in 48 ball mini BGA and 44-pin TSOP (Type II)
packages.