IS61LV256AL
FEATURES
• High-speed access times:
— 10 ns
• Automatic power-down when chip is deselected
• CMOS low power operation
— 60 μW (typical) CMOS standby
— 65 mW (typical) operating
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three-state outputs
• Lead-free available
DESCRIPTION
The ISSI IS61LV256AL is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields access times as fast as 8 ns maximum.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
150 μW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active
LOW Chip Enable (CE). The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61LV256AL is available in the JEDEC standard
28-pin, 300-mil SOJ and the 450-mil TSOP (Type I) packages.
