IS61LP6436A
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP package
• Power-down snooze mode
• Power Supply:
+3.3V VDD
+3.3V or 2.5V VDDQ (I/O)
• Lead-free available
DESCRIPTION
The ISSI IS61LP6432A/36A is a high-speed synchronous
static RAM designed to provide a burstable, high-performance
memory for high speed networking and communication
applications. The IS61LP6432A is organized as 64K
words by 32 bits and the IS61LP6436A is organized as 64K
words by 36 bits. Fabricated with ISSI's advanced CMOS
technology, the device integrates a 2-bit burst counter, highspeed
SRAM core, and high-drive capability outputs into a
single monolithic circuit. All synchronous inputs pass
through registers controlled by a positive-edge-triggered
single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be from
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQa, BW2 controls DQb, BW3 controls
DQc, BW4 controls DQd, conditioned by BWE being
LOW. A LOW on GW input would cause all bytes to be
written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
