IS45S81600E
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
Vdd Vddq
IS45S81600E 3.3V 3.3V
IS45S16800E 3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16 ms (A2 grade) or
64 ms (A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Automotive Temperature Range:
Option A1: -40oC to +85oC
Option A2: -40oC to +105oC
OVERVIEW
ISSI's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 128Mb SDRAM is organized as follows.
