IS45S32800G
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16ms (A2 grade) or
64 ms (Commercial, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
OPTIONS
• Package:
90-ball TF-BGA
• Operating Temperature Range:
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
Automotive Grade, A1 (-40oC to +85oC)
Automotive Grade, A2 (-40oC to +105oC)
OVERVIEW
ISSI's 256Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 256Mb SDRAM is organized in 2Meg x 32 bit x 4
Banks.
