IS45S32200C1
FEATURES
• Clock frequency: 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length:
(1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Automotive Temperature Grade
Option A: 0oC to +70oC
Option A1: -40oC to +85oC
• Package 400-mil 86-pin TSOP II and 90-ball
BGA
• Lead free package is available
OVERVIEW
ISSI's 64Mb Synchronous DRAM IS45S32200C1 is
organized as 524,288 bits x 32-bit x 4-bank for improved
performance. The synchronous DRAMs achieve highspeed
data transfer using pipeline architecture. All inputs
and outputs signals refer to the rising edge of the clock
input.
