IS45S16100E
FEATURES
• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Two banks can be operated simultaneously and
independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• 2048 refresh cycles every 32ms (Com, Ind, A1
grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and
precharge command
• Byte controlled by LDQM and UDQM
• Packages: 400-mil 50-pin TSOP-II and 60-ball
TF-BGA
• Temperature Grades:
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
Automotive A1 (-40oC to +85oC)
Automotive A2 (-40oC to +105oC)
DESCRIPTION
ISSI’s 16Mb Synchronous DRAM IS42/4516100E is
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
