IS42S32200E
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length:
(1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 16ms (A2 grade) or
64ms (Commercia, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
OPTIONS
• Packages:
86-pin TSOP-II
90-ball TF-BGA
• Operating temperature range:
Commercial (0oC to + 70oC)
Industrial (-40oC to + 85oC)
Automotive Grade, A1 (-40oC to + 85oC)
Automotive Grade, A2: (-40oC to +105oC)
OVERVIEW
ISSI's 64Mb Synchronous DRAM IS42/45S32200E is
organized as 524,288 bits x 32-bit x 4-bank for improved
performance. The synchronous DRAMs achieve highspeed
data transfer using pipeline architecture. All inputs
and outputs signals refer to the rising edge of the clock
input.
