IS42S16402J
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Reduced strength output drive: 12-15mA
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Self refresh modes
• Auto refresh (CBR)
• 4096 refresh cycles every 64 ms (Com, Ind, A1
grade) or 16ms (A2 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
OPTIONS
• Package:
54-pin TSOP II
54-ball TF-BGA (8mm x 8mm)
60-ball TF-BGA (10.1mm x 6.4mm)
• Operating Temperature Range
Commercial (0oC to +70oC)
Industrial (-40oC to +85oC)
Automotive Grade A1 (-40oC to +85oC)
Automotive Grade A2 (-40oC to +105oC)
OVERVIEW
ISSI's 64Mb Synchronous DRAM is organized as 1,048,576
bits x 16-bit x 4-bank for improved performance. The
synchronous DRAMs achieve high-speed data transfer
using pipeline architecture. All inputs and outputs signals
refer to the rising edge of the clock input.
