品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍 FEATURES
• Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Isolated Central Mounting Hole • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. |
