品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍 DS2786BFeatures
♦ Relative Capacity Calculated from Combination Coulomb Counter and Open-Circuit Cell Voltage (OCV) Battery Model ♦ Accurate Warning of Low-Battery Conditions Even on First Cycle (No Learn Cycle Needed) ♦ 12-Bit Battery Voltage Measurement ±10mV Accuracy 1.22mV LSB, 0V to 4.5V Input Range ♦ 11-Bit Bidirectional Current Measurement 25μV LSB, ±51.2mV Dynamic Range 1.67mA LSB, ±3.4A (RSNS = 15mΩ) ♦ Current Accumulation Measurement Resolution ±204.8mVh Range ±13.65Ah (RSNS = 15mΩ) ♦ Internal Temperature Measurement 0.125°C LSB, ±3°C Accuracy ♦ Two 11-Bit Auxiliary Input-Voltage Measurements ±8 LSB Accuracy, Ratiometric Inputs Eliminate Supply Accuracy Issues ♦ VOUT Pin Drives Resistive Dividers, Reduces Current Consumption ♦ 2-Wire Interface ♦ Low Power Consumption Active Current: 50μA (typ), 80μA (max) Sleep Current: 1μA (typ), 3μA (max) |
