FEATURES
High-Side nFET Drivers and Protection Circuitry
♦ Precision Voltage, Temperature, and Current
Measurement System
♦ Cell-Capacity Estimation from Coulomb Count,
Discharge Rate, Temperature, and Cell
Characteristics
♦ Estimates Cell Aging Between Learn Cycles
♦ Uses Low-Cost Sense Resistor
♦ Allows Calibration of Gain and Temperature
Coefficient
♦ Programmable Thresholds for Overvoltage and
Overcurrent
♦ Pack Authentication Using SHA-1 Algorithm
(DS2776/DS2778)
♦ 32-Byte Parameter EEPROM
♦ 16-Byte User EEPROM
♦ Maxim 1-Wire Interface with 64-Bit Unique ID
(DS2775/DS2776)
♦ 2-Wire Interface with 64-Bit Unique ID
(DS2777/DS2778)
♦ 3mm x 5mm, 14-pin TDFN Lead-Free Package
