品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍 FEATURES
• Ultra low charge injection (± 0.5 pC, typ. over the full analog signal range) • Leakage current < 0.5 nA max. at 85 °C (for DG636EQ-T1-E3) • Low switch capacitance (Csoff, 2 pF typ.) • Low RDS(on) - 115 max. • Fully specified with single supply operation at 3.0 V, 5.0 V and dual supplies at ± 5.0 V • Low voltage, 2.5 V CMOS/TTL compatible • 600 MHz, - 3 dB bandwidth • Excellent isolation and crosstalk performance (typ. > - 60 dB at 10 MHz) • Fully specified from - 40 °C to 85 °C and - 40 °C to + 125 °C • 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x 2.6 mm) • Compliant to RoHS directive 2002/95/EC |
