品牌索引 产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
|
产品介绍
说明
The ’HC365, ’HCT365, and ’HC366 silicon gate CMOS three-state buffers are general purpose high-speed non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when driving large bus capacitances. These circuits possess the low power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable of driving up to 15 low power Schottky inputs. The ’HC365 and ’HCT365 are non-inverting buffers, whereas the ’HC366 is an inverting buffer. These devices have two three-state control inputs (OE1\ and OE2\) which are NORed together to control all six gates. The ’HCT365 logic families are speed, function and pin compatible with the standard LS logic family. 特性
Data sheet acquired from Harris Semiconductor |