BFU730F
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.8 dB at 5.8 GHz
High maximum power gain 18.5 dB at 5.8 GHz
110 GHz fT silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Low noise amplifiers for microwave communications systems
Ka band oscillators DRO’s
Low current battery equipped applications
Microwave driver / buffer applications
Wi-Fi / WLAN / WiMAX
GPS
RKE
AMR
ZigBee
LTE, cellular, UMTS
SDARS first stage LNA
FM radio
Mobile TV
Bluetooth
