BFG424F
1.1 General description
NPN double polysilicon wideband transistor with buried layer for low voltage applications
in a plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
1.3 Applications
Radio Frequency (RF) front end wideband applications such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Handy-phone
System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVison (SATV) tuners
high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
Block (LNB)
