二极管

USB

三极管

可控硅(晶闸管)

场效应管(MOSFET)

集成电路

连接器

LED系列产品

电感器

继电器

传感器

电容器

电阻器

保护器件

光电器件

压电晶体

开关原件

功率模块

AT45DB161E

 features
 Single 2.3V - 3.6V or 2.5V - 3.6V supply
 Serial Peripheral Interface (SPI) compatible
 Supports SPI modes 0 and 3
 Supports Atmel® RapidS™ operation
 Continuous Read capability through entire array
 Up to 85MHz
 Low-power Read option up to 10MHz
 Clock-to-output time (tV) of 6ns maximum
 User configurable page size
 512 bytes per page
 528 bytes per page (default)
 Page size can be factory pre-configured for 512 bytes
 Two fully independent SRAM data buffers (512/528 bytes)
 Allows receiving data while reprogramming the Main Memory Array
 Flexible programming options
 Byte/Page program (1 to 512/528 bytes) directly into main memory
 Buffer Write
 Buffer to Main Memory Page Program
 Flexible Erase options
 Page Erase (512/528 bytes)
 Block Erase (4KB)
 Sector Erase (128KB)
 Chip Erase (16-Mbits)
 Program and Erase Suspend/Resume
 Advanced hardware and software data protection features
 Individual sector protection
 Individual sector lockdown to make any sector permanently read-only
 128-byte, One-Time Programmable (OTP) Security Register
 64 bytes factory programmed with a unique identifier
 64 bytes user programmable
 Software controlled reset
 JEDEC Standard Manufacturer and Device ID Read
 Low-power dissipation
 500nA Ultra-Deep Power-Down current (typical)
 3μA Deep Power-Down current (typical)
 25μA Standby current (typical)
 11mA Active Read current (typical)
 Endurance: 100,000 program/erase cycles per page minimum
 Data retention: 20 years
 Complies with full industrial temperature range
 Green (Pb/Halide-free/RoHS compliant) packaging options
 8-lead SOIC (0.150" wide)
 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
 9-ball Chip-scale BGA (5 x 5 x 1.2mm)