品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
|
产品介绍 AT45DB021EFeatures
Single 1.65V - 3.6V supply Serial Peripheral Interface (SPI) compatible Supports SPI modes 0 and 3 Supports Atmel® RapidS™ operation Continuous read capability through entire array Up to 70MHz Low-power read option up to 20MHz Clock-to-output time (tV) of 6ns maximum User configurable page size 256 bytes per page 264 bytes per page (default) Page size can be factory pre-configured for 256 bytes One SRAM data buffer (256/264 bytes) Flexible programming options Byte/Page Program (1 to 256/264 bytes) directly into main memory Buffer Write Buffer to Main Memory Page Program Flexible erase options Page Erase (256/264 bytes) Block Erase (2KB) Sector Erase (32KB) Chip Erase (2-Mbits) Advanced hardware and software data protection features Individual sector protection Individual sector lockdown to make any sector permanently read-only 128-byte, One-Time Programmable (OTP) Security Register 64 bytes factory programmed with a unique identifier 64 bytes user programmable Hardware and software controlled reset options JEDEC Standard Manufacturer and Device ID Read Low-power dissipation 200nA Ultra-Deep Power-Down current (typical) 3μA Deep Power-Down current (typical) 25μA Standby current (typical at 20MHz) 4.5mA Active Read current (typical) Endurance: 100,000 program/erase cycles per page minimum Data retention: 20 years Complies with full industrial temperature range Green (Pb/Halide-free/RoHS compliant) packaging options 8-lead SOIC (0.150ʺ wide and 0.208" wide) 8-pad Ultra-thin DFN (5 x 6 x 0.6mm) 9-ball Ultra-thin UBGA (6 x 6 x 0.6mm) |
