品牌索引
产品分类 > 小信号开关二极管> 瞬态电压抑制器TVS/ESD> 双极管二极管> 调谐二极管> 齐纳(稳压)二极管> 小信号肖特基二极管> 频带转换二极管> 中/高功率管> 射频PIN二极管> Sinterglass二极管> 整流器 > N沟道(N-Channel)> P沟道(P-Channel)> 双N沟道(Dual N-Channel)> 双P沟道(Dual P-Channel)> 双N和P沟道(Dual N and P-Channel)
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产品介绍
High isolation voltage: 5000 V rms Enhanced system-level ESD performance per IEC 61000-4-x Low power operation 5 V operation 1.6 mA per channel maximum @ 0 Mbps to 2 Mbps 3.7 mA per channel maximum @ 10 Mbps 3 V operation 1.4 mA per channel maximum @ 0 Mbps to 2 Mbps 2.4 mA per channel maximum @ 10 Mbps Bidirectional communication 3 V/5 V level translation High temperature operation: 105°C High data rate: dc to 10 Mbps (NRZ) Precise timing characteristics 3 ns maximum pulse width distortion 3 ns maximum channel-to-channel matching High common-mode transient immunity: >25 kV/μs 16-lead SOIC wide body package version (RW-16) 16-lead SOIC wide body enhanced creepage version (RI-16) Safety and regulatory approvals (RI-16 package) UL recognition: 5000 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice #5A IEC 60601-1: 250 V rms (reinforced) IEC 60950-1: 400 V rms (reinforced) VDE Certificate of Conformity DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 VIORM = 846 V peak |
